Investigation of the Transverse Spread of Neodymium Ions Implanted in SOI

[摘要] It is very important to consider the range distribution and transverse distribution of ions implanted into semiconductor materials in design and fabrication of semiconductor integration devices by ion implantation. The Nd (neodymium) ions with energy of 400 keV and dose of 2×1015ions/cm2were implanted into SOI (Silicon-on-insulator) samples at room temperature under the angles of 0°, 30° and 45°, respectively. The transverse distribution of 400 keV Nd ions implanted in SOI samples were measured by Rutherford backscattering technique. The measured results are compared with Monte Carlo code SRIM2012 predictions. It can be found that the experiment values were in good agreement with the prediction of SRIM2012 code.

[发布机构] College of Science, Shandong Jianzhu University, Jinan; 250101, China^1

[效力级别] 机械制造 [学科分类] 材料科学（综合）

[关键词] Experiment values;Measured results;Monte Carlo codes;Neodymium ions;Range distribution;Rutherford backscattering techniques;Semiconductor integration;Transverse distribution