Conversion model of radiation-induced interface-trap buildup and the some examples of its application

[摘要] It is supposed that the rechargeable radiation-induced positive centers in the oxide must have energy levels within the Si forbidden gap. These assumptions served as the basis for the physical model of the interface-trap build-up and enhanced low dose rate sensitivity (ELDRS) in bipolar devices. As examples of using the proposed conversion model is considered for bipolar devices space application.

[发布机构] National Research Nuclear University, MEPhI(Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow; 115409, Russia^1

[关键词] Conversion model;Enhanced low-dose-rate sensitivity;Forbidden gaps;Interface traps;ITS applications;Physical model;Radiation-induced;Radiation-induced interface traps