Influence of chip temperature on the hydrogen sensitivity of MISFET-based sensors

[摘要] The chip temperature influence on the hydrogen sensitivity of the metal-insulator- semiconductor field-effect transistor (MISFET) with structure Pd-Ta2O5-SiO2-Si was investigated. MISFET sensing element was integrated on silicon chip together with (p-n)- junction temperature sensor and heater-resistor. There were measured the hydrogen responses of the MISFET threshold voltage for room and higher chip temperatures. The threshold voltage VTas a function of hydrogen concentration C was determined for different temperatures T. The models of hydrogen and temperature sensitivities based on the experimental dependencies of VT(C, T) are presented in this work.

[发布机构] National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow; 115409, Russia^1;Induko Ltd., Seslavinskaia str. 32/2, Moscow, Russia^2

[关键词] Chip temperature;Heater resistors;Hydrogen concentration;Hydrogen sensitivity;Junction temperatures;Sensing elements;Silicon chip;Temperature sensitivity