Pseudomorphic HEMT quantum well AlGaAs/InGaAs/GaAs with AlAs:δ-Si donor layer

[摘要] A comparison between the electron transport and optical properties of pseudomorphic high electron mobility quantum well with conventional AlGaAs donor layer and with AlAs delta-Si doped donor layer is presented. The structure with AlAs donor layer exhibits a mobility rise combined with the electron concentration decrease. We address this effect to the suppression of electron scattering on remote donor impurities and the decreased doping efficiency of Si atoms embedded in pure AlAs.

[发布机构] National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow; 115409, Russia^1

[关键词] AlGaAs/InGaAs/GaAs;Donor impurities;Donor layers;Doping efficiency;Electron concentration;Electron transport;High electron mobility;Pseudomorphic HEMT