Behavior of SiC MOSFET under Short-Circuit during the On-State
[摘要] This paper presents behavior of SiC MOSFET under short-circuit during the on-state conditions. Although much research has been conducted on the short-circuit characteristics of the first type of SiC MOSFETs, no paper has reported the second type. A set of test benchs which can perform the second type of short-circuit are designed. Simulation by LTspice combined with experiments are conducted to evaluate the influences of several important parameters like miller capacitance, gate resistance, gate-source voltage, drain-source voltage on the second type of short-circuit characteristics of 1200 V/36 A SiC MOSFET.
[发布日期] [发布机构] State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute of State Grid Corporation of China, Beijing; 102209, China^1;State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing; 102206, China^2
[效力级别] 无线电电子学 [学科分类]
[关键词] Drain-source voltage;Gate resistance;Gate source voltage;Miller capacitance;On state;Short-circuit characteristics;SiC MOSFET;SiC MOSFETs [时效性]
