Design and Fabrication of Multi Quantum well based GaN/InGaN Blue LED

[摘要] This paper presents the optimization of the multi-quantum well based Light Emitting Diode (LED) structure. We investigate the electrical and optical properties of the device on several factors like well width, barrier width, the number of quantum wells and then optimize the structure. The device is optimized for a well width and barrier width of 3nm and 6nm respectively, consisting of five quantum wells. Simulations were carried out using Silvaco ATLAS TCAD simulation program (Silvaco International, USA). The optimized structure was grown by MOCVD and fabricated. The I-V characteristic was also measured.

[发布机构] Physics Department, BKBIET, CEERI road, Pilani, Rajasthan; 333031, India^1;Birla Institute of Technology and Science (BITS), Pilani, Rajasthan; 333031, India^2;Flexible and Non-Silicon Electronics Group, CSIR-CEERI, Pilani, Rajasthan; 333031, India^3

[关键词] Barrier widths;Electrical and optical properties;IV characteristics;Light emitting diode (LED);Multi quantum wells;Optimized structures;TCAD simulation;Well width