Hall Mobility Maps for 4H-Silicon Carbide by Monte Carlo Simulations
[摘要] The Monte Carlo Single Particle approach was used to analyze electron transport in 4H-SiC taking into account the influence of the magnetic field. Within the numerical approach it was possible to evaluate electron Hall mobility and the Hall factor for the wide range of donor concentrations and temperatures varying from 300 K up to 700 K.
[发布日期] [发布机构] Lodz University of Technology, Department of Semiconductor and Optoelectronic Devices, Wolczanska 211/215, 90-924 Lodz, Poland^1
[效力级别] 无线电电子学 [学科分类]
[关键词] 4H silicon carbide;Donor concentrations;Electron transport;Hall factor;Numerical approaches;Single particle [时效性]
