Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs
[摘要] An extensive on-wafer experimental campaign is performed to extract the thermal resistance of state-of-the-art toward-THz silicon germanium bipolar transistors designed and developed within the European DOTFIVE project. The dependence of this critical parameter on scaling, as well as on the emitter layout, is carefully evaluated, and the resulting junction temperatures are determined.
[发布日期] [发布机构] Department of Electrical Engineering and Information Technology, University Federico II, via Claudio 21, 80125 Naples, Italy^1;Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany^2
[效力级别] 无线电电子学 [学科分类]
[关键词] Experimental campaign;Junction temperatures;On-wafer;Silicon Germanium;State of the art;Thermal behaviors [时效性]
