Recombination Properties of Diode Structures by Study of Thermal Emission Beyond the Fundamental Absorption Band

[摘要] The study presents the possibilities of applying the measurement of spatial and temporal distribution of thermal radiation of a p-n junction structure located in a homogeneous temperature field higher than the ambient temperature, modulated by the presence of excess carriers injected through the junction, to determine surface recombination velocity at the injecting contact of the diode emitter and to measure the diffusion length in the base. Good agreement was obtained between the experimental results and calculations based on solutions of the transport equations.

[发布机构] Institute of Electron Technology, Warsaw, Poland^1;Institute of Semiconductors Physics, Kiev, Ukraine^2

[效力级别] 无线电电子学

[关键词] Diffusion length;Diode emitters;Diode structure;Excess carriers;Spatial and temporal distribution;Surface recombination velocities;Thermal emissions;Transport equation