Synthesis and characterization of thin amorphous carbon films doped with nitrogen on (001) Si substrates

[摘要] We synthesized undoped as well as up to 6 at.% nitrogen (N) doped thin amorphous carbon (α-C) films by plasma- enhanced chemical vapor deposition (PECVD) method. The source of carbon/carbon containing radicals was benzene (C6H6) in Ar gas- mixture. The obtained thin films were studied by optical microscopy, X-ray powder diffraction, UV-VIS- NIR Spectral Ellipsometry, IR and Raman spectroscopic studies as well as by X-ray photoelectron spectroscopies (XPS). We established by XPS that the deposited layers consist of a mix of sp2and sp3hybridized carbon. The films are amorphous as it was shown by the measured XRD patterns. The ellipsometric measurements enabled calculation of transition energies and the complex results showed that films with thickness of 15- 120 nm and different properties can be obtained by this technique.

[发布机构] Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Shausee Blvd., Sofia; 1784, Bulgaria^1;Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Shausee Blvd., Sofia; 1784, Bulgaria^2;Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Sofia; 1784, Bulgaria^3;Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 11, Sofia; 1113, Bulgaria^4;R. Kaishev Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl. 11, Sofia; 1113, Bulgaria^5;Faculty of Physics, Sofia University, 5 James Bourchier Blvd., Sofia; 1164, Bulgaria^6

[效力级别] 材料科学 [学科分类] 材料科学（综合）

[关键词] Deposited layer;Ellipsometric measurements;Plasma enhanced chemical vapor depositions (PE CVD);Raman spectroscopic study;Si substrates;Spectral ellipsometry;Synthesis and characterizations;Transition energy