Radiative characteristics of semiconductor injection lasers based on narrow asymmetric waveguides

[摘要] Quantum well InGaAs/GaAs lasers based on narrow asymmetric waveguide were created and investigated in pulse and CW modes. Broad-area 50μm stripe lasers showed internal quantum efficiency as high as 95%, threshold current density as low as 160 A/cm2. Wall-plug efficiency in CW mode reached the value of 75%. The obtained parameters make the concept of narrow asymmetric waveguide promising for high-power laser diodes.

[发布机构] St.Petersburg State Polytechnical University, Polytekhnicheskaya 29, St.Petersburg, 195251, Russia^1;Ioffe Physical-Technical Institute, Polytekhnicheskaya 26, St.Petersburg, 194021, Russia^2;St.Petersburg Academic University, Nanotechnology Research and Education Centre, Khlopina 8/3, 194021, St.-Petersburg, Russia^3

[效力级别] 天文学 [学科分类] 天文学(综合)

[关键词] Asymmetric waveguides;Broad areas;InGaAs/GaAs;Internal quantum efficiency;Radiative characteristics;Wallplug efficiency