Graphene synthesized on porous silicon for active electrode material of supercapacitors

[摘要] We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

[发布机构] Department of Micro- and Nanosystem Technology, University College of Southeast Norway, Campus Vestfold, Raveien 215, Borre; 3184, Norway^1

[效力级别] 能源学

[关键词] Active electrode materials;Catalyst layers;Chemical vapour deposition;Graphene growth;Micro-four-point probes;Porous nanostructures;Silicon samples;Specific capacitance