Enhancing the power conversion efficiency of solar cells employing down-shifting silicon quantum dots

[摘要] We report the synthesis and characterization of silicon quantum dots that exhibit down-shifting, photo luminescent characteristics. We also discuss the fabrication and characterization of single crystal Silicon (c-Si) Solar cells with and without the influence of the previously mentioned QDs. The incorporation of these nanostructures triggers improvements in the performance of the fabricated photovoltaic devices, especially in the open circuit voltage (Voc) and short circuit current density (Jsc). Specifically, the experimental results showed increments in the Vocfrom 532.6 to 536.2 mV and in the Jscfrom 33.4 to 38.3 mA/cm2. The combined effect of those improved Voc and Jsc values led to an increment in the power conversion efficiency (PCE) from 11.90 to 13.37%. This increment represents an improvement of the order of 12.4% on the power conversion efficiency of this type of solar cells. The observed results could be conducive to promoting the proliferation of photovoltaic structures.

[发布机构] MEMS Research Lab, Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio; TX; 78249, United States^1;Departamento de Física, Mexico^2;Departamento de Investigatión en Física, Universidad de Sonora, Son, Hermosillo, 83000, Mexico^3;Centro de Ciencias Exactas e Ingenierías, Universidad de Guadalajara, Guadalajara, Jal; 44430, Mexico^4

[效力级别] 能源学

[关键词] Fabrication and characterizations;Luminescent characteristics;Photovoltaic devices;Photovoltaic structures;Power conversion efficiencies;Silicon quantum dots;Single crystal silicon;Synthesis and characterizations