Reducing The Light Reflected by Silicon Surface Using ZnO/TS Antireflection Coating

[摘要] Zinc Oxide (ZnO) thin films was coated on a texturized silicon (TS) surface using a spincoating technique. The TS layer was prepared by a wet etching method using 20 % KOH solution at temperature of 80°C for 5 minutes. To prepared precursor solution for ZnO layer, zinc acetate dehydrate, 2-methoxyethanol and monoethanolamine are used as a starting material, solvent and stabilizer, respectively. The XRD and SEM measurements confirmed that the thin films grown by spincoating technique have a single oriented crystal plane and homogenous surfaces. From photoluminescence measurement found that the optical band gap of grown films to be 3.44 eV. The optical reflectance of the grown films is characterized by UV-VIS spectrometry show that the presence of anti-reflection coating ZnO/TS is proven to reduce the reflection of solar radiation by silicon surface significantly.

[发布机构] Department of Physics Education, Universitas Pendidikan Indonesia, Indonesia^1;Department of Physics, Intitut Teknologi Bandung, Indonesia^2;Department of Physics Education, Universitas Sultan Ageng Tirtayasa, Indonesia^3;Department of Physics Education, Universitas Tadulako, Indonesia^4

[效力级别] 物理学

[关键词] 2-Methoxyethanol;Monoethanolamine;Optical reflectance;Oriented crystals;Photoluminescence measurements;Precursor solutions;UV-Vis spectrometry;Zinc oxide (ZnO)