Modeling the Thermal Response of Al0.3Ga0.7As/GaAs/Ge Multijunction Solar Cells

[摘要] The III-V group of semiconductor materials are well-known for their excellent performance as high efficient solar cells. This type of material is usually arranged in a multijunction structure which allows a continuous absorption of sun's radiation. The electronic transport properties of semiconductor materials are influenced by the temperature. In this paper, the effect of temperature to the performance of Al0.3Ga0.7As/GaAs/Ge multijunction solar cells was evaluated using a simulation approach. By varying the temperature of materials to 25 °C, 50 °C, 75 °C and 100 °C in PC1D solar cell simulation, we were able to determine the performance of each cell and the overall efficiency of Al0.3Ga0.7As/GaAs/Ge multijunction solar cells. The results have shown that the increasing temperature of the materials will reduce the Vocof each cell by -1.40 mV/°C, -1.40 mV/°C and -1.30 mV/°C respectivelly, while the total efficiency of multijunction solar cells was reduced by -0.106%/°C.

[发布机构] Department of Physics, Bogor Agricultural University, Jalan Meranti Kampus IPB, Dramaga Bogor; 16680, Indonesia^1

[效力级别] 物理学

[关键词] Effect of temperature;Electronic transport properties;Increasing temperatures;Multi-junction structures;Overall efficiency;Simulation approach;Solar cell simulation;Thermal response