Hall coefficient and resistivity of an amorphous palladium-silicon alloy

[摘要] The Hall coefficient and resistance in several specimens ofan amorphous metallic alloy containing 80 at.% palladium and 20 at.%silicon have been investigated at temperatures between 4.2°K and roomtemperature. An ideal limiting behavior of these transportcoefficients was analyzed on the basis of the nearly free electronmodel to yield a carrier density of 9 x 10²² cm.^-3, or about 1.7electrons per palladium atom, and a mean free path of about 9Å whichis almost constant with temperature. The deviations of the individualspecimens from this ideal behavior, which were small but noticeablein the relative resistivity and much greater in the Hall coefficient,can be explained by invoking disk-shaped crystalline regions with lowresistivity and a positive Hall coefficient. A detailed calculationshows how a volume fraction of such crystalline material too small tobe noticed in X-ray diffraction could have a significant effect onthe resistivity and a much greater effect on the Hall coefficient.

[发布机构] University:California Institute of Technology;Department:Engineering and Applied Science

[关键词] Materials Science