I. Schottky barriers produced by polymeric sulfur nitride,(SN)x, on nine common III-V and II-VI compound semiconductorsare compared to barriers formed by Au. Theconductor (SN)x produces significantly higher barriers ton-type semiconductors and lower barriers to p-type semiconductorsthan Au, the most electronegative elementalmetal. The barrier height improvement, defined asɸ(SN)x - ɸ(Au), is smaller on covalent semiconductorsthan on ionic semiconductors; (SN)x barriers follow theionic-covalent transition. Details of (SN)x film deposition,samples preparation, and barrier height measurementsare described.
II. The rate of dissolution of amorphous Si into solidAl is measured. The rate of movement of the amorphousSi/Al interface is found to be much faster than predictedby a simple model of the transport of Si through Al.This result is related to defects in the growth of epitaxialSi using the solid phase epitaxy process.
