Burst noise is a normally undesirable phenomenon occasionally found in bipolar semiconductors and other current carrying devices. It is an electrical fluctuation which exhibits itself as one or more rectangular waveforms possessing constant amplitude but random pulse duration. The experimental portion of this study relates only to burst noise in bipolar transistors and operational amplifiers.
Burst noise is not Gaussian as are the more common fluctuationsin semiconductors. That fact was established by estimation of the amplitudedistribution, a technique found to be sensitive in thedetection of burst noise obscured by quantities of conventional noise.
The amplitude of burst noise varies with the parameters ofbase-emitter, voltage temperature and source resistance. An exponential increase of amplitude with Vbe and a lack of dependence on collector voltage implied that the noise originates in the base-emitter junction.A noise magnitude linearly proportional to source resistance over severaldecades leads one to infer the equivalent circuit of a current sourcebetween base and emitter. Current amplitudes of 10-10 to nearly 10-6ampere p-p were observed.
Burst noise pulse durations were found as brief as 10 µsec and as long as some 29 hours; neither an upper nor a lower bound was established. The two noise states (high and low, in the rectangularwaveform) were treated separately in the duration experiments. Carefulmeasurements on the relative frequency with which the pulse occurredgave duration probability densities of 1/τ e -t/τ for each state.That density also applies to a single particle alternately being trappedand escaping and is consistent with the physical theory due to Mead andWhittier relating burst noise to trapping phenomena. Measurements onnoise pulse durations in both states as a function of Vbe lent support to the theory and indicated both trapping and recombination-generation centers were present in samples examined. Another theory, due to Leonard and Jaskolsky, was found inconsistent with the evidence for burst noise's origin in the base-emitter junction. Duration versus temperature dependence indicated activation energies of roughly .5 eV.
Although suggestions in the literature for the power spectrum of burst noise have been inconsistent, digital spectral estimation and judicious use of a wave analyzer showed the spectrum to be flat at low frequencies and to fall as 1/f2 at higher ones. Proceeding only from the measured pulse duration probability density, the power spectrum was deduced on theoretical grounds for the first time. The method entailed the derivation of burst noise's autocorrelation function which, when Fourier transformed, yielded
S(w) = 2/(τ1 + τ0)[(1/τ1 + 1/τ0)2 + w2]
where τ1 and τ0 are the average durations in the two noise estates.The expression proved consistent with experiment.
