Electrical and Optical Characteristics of Indium Arsenide Junction Lasers

[摘要] Electrical and light emission characteristics of pulsed InAs junction lasers were studied at various temperatures ranging from liquid helium temperature to room temperature. The junctions wereprepared by vapor diffusing Zn into Sn doped n-type wafers of InAs, with a donor concentration of 10¹⁸cm^-3. Data variation ofcapacitance with bias showed these to be abrupt junctions. At lowinjection currents, the current injection mechanism was determinedto be photon-assisted tunneling. Gain and loss factors at 20.4°K were determined from the variation of threshold current with diode cavity length. An independent value of the gain factor was determined from the observed variation with current of the superradiantly narrowed line-width from a nonlasing structure.The time-resolved laser spectra shift to longer wavelengths with time during pulsed operation of the laser.The line shift results from joule heatingof the diode, and follows the variation of bandgap of InAs with temperature.Mode confinement studies indicate that the mode confinement is due to the optical gain in the active region at the junction and that the active region extends to approximately a diffusion length on both sides of the junction.

[发布机构] University:California Institute of Technology;Department:Physics, Mathematics and Astronomy

[关键词] Physics