Positron annihilation studies in Li-implanted alumina

[摘要] Depth dependent Doppler broadening of annihilation radiation (DBAR) measurements are carried out for a sample of Li ion implanted in alumina. The effect of Li ion implantation and the subsequent isochronal annealing at the temperatures up to 1100 °C on the Doppler broadening annihilation parameters (S-parameter) are studied. The S-parameter around the Li implantation depth (∼191 nm) increased with annealing temperature up to 700 °C and reduced beyond. The results suggest possible Li cluster formation in annealed sample.

[发布机构] Department of Physics, Savitribai Phule Pune University, Pune; 411007, India^1;Radiochemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai; 400085, India^2

[效力级别] 化学

[关键词] Annealed samples;Annealing temperatures;Cluster formations;Depth dependents;Doppler broadening of annihilation radiations;Implantation depth;Ion implanted;Isochronal annealing