Mathematical modeling of piezoresistive elements

[摘要] This article presents the longitudinal piezoresistive coefficients for thin film amorphous semiconductor type a-C:H. Experimental data and mathematical models have been used in computer simulations. The results show that a reduction of the longitudinal piezoresistive coefficient occurs due to the increased concentration of impurities in the films analyzed.

[发布机构] DCEEng, Department of Physical Sciences and Engineering, UNIJUI - Regional State University Northwest Rio Grande Do sul, 3000 Street of Commerce, Ijui, RS, Brazil^1

[效力级别] 力学 [学科分类] 力学，机械学

[关键词] Impurities in;Piezo-resistive;Piezoresistive coefficients