The efficiency of UV LEDs based on GaN/AlGaN heterostructures

[摘要] The UV LED GaN/AlGaN heterostructures obtained by HVPE approach were investigated. It was shown that the peak wavelength of UV LEDs was in the range of 360-380 nm with FWHM of 10-13 nm. At operating current of 20 mA, the active region temperature Tj was 43°C, the output optical power and efficiency - 1.14 mW and 1.46%, respectively. It was shown that the use of HVPE method allowed to achieve a high degree of structural perfection of epitaxial structures.

[发布机构] Saint-Petersburg Electrotechnical University LETT, 5 Prof. Popov Str., St. Petersburg; 197376, Russia^1;Nitride Crystals Group Ltd., pr. Engel'sa 27, St. Petersburg; 194156, Russia^2;University ITMO, Kronverkskiy pr. 49, St. Petersburg; 197101, Russia^3;Nitride Crystals Inc., 181 E Industry Court, Deer Park; NY; 11729, United States^4

[效力级别] 天文学 [学科分类] 天文学(综合)

[关键词] Active regions;Epitaxial structure;Gan/algan;Operating currents;Optical power;Peak wavelength;Structural perfection;UV LEDs