Determination of the Diamagnetic and Paramagnetic Impurity Magnetic Susceptibility in Ge:As near the Metal Insulator phase Transition

[摘要] Low-temperature magnetic susceptibility of heavily doped Ge: As samples has been investigated by methods SQUID magnetometry and ESR spectroscopy near the metal-insulator phase transition. Paramagnetic component of the impurity magnetic susceptibility was investigated by ESR previously. Using both techniques make possible to determined the diamagnetic component of impurity susceptibility. The value of the impurity diamagnetic susceptibility equals to 5×10-8cm3/g and corresponds to the localization radius of the As donor- electron near the metal-insulator phase transition.

[发布机构] Ioffe Institute, St. Petersburg; 194021, Russia^1;Lappeenranta University of Technology, Lappeenranta; 53850, Finland^2

[效力级别] 天文学 [学科分类] 天文学(综合)

[关键词] Diamagnetic susceptibility;Donor electrons;ESR spectroscopy;Low temperatures;Metal-insulator phase transition;Paramagnetic components;Paramagnetic impurity;SQUID magnetometry