Electro-physical characteristics of MIS structures with HgTe- based single quantum wells

[摘要] The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer. The thickness of a quantum well was 5.6 nm, and the composition of barrier layers with the thickness of 35 nm was close to 0.65. Measurements were conducted in the range of temperatures from 8 to 200 K. It is shown that for structure with quantum well based on HgTe capacitance and conductance oscillations in the strong inversion are observed. Also it is assumed these oscillations are related with the recharging of quantum levels in HgTe.

[发布机构] Radiophysics Faculty, Nanoelectronics and Nanophotonics Laboratory, Siberian Physical-technical Institute, Tomsk State University, 36 Lenina Av., Tomsk; 634021, Russia^1

[效力级别] 天文学 [学科分类] 天文学(综合)

[关键词] Barrier layers;Conductance oscillations;Metal insulator semiconductor structures;Physical characteristics;Quantum levels;Research results;Single quantum well;Strong inversion