Silicon Germanium Cryogenic Low Noise Amplifiers

[摘要] Silicon germanium heterojunction bipolar transistors have emerged in the last decade as an excellent option for use in cryogenic low noise amplifiers. This paper begins with a review of the critical developments that have led to today's cryogenic low noise amplifiers. Next, recent work focused on minimizing the power consumption of SiGe cryogenic amplifiers is presented. Finally, open issues related to the cryogenic noise properties of SiGe HBTs are discussed.

[发布机构] Department of Electrical and Computer Engineering, University of Massachusetts Amherst, 100 Natural Resources Road, Amherst; MA; 01003-9292, United States^1

[关键词] Cryogenic amplifier;Cryogenic low noise amplifiers;Noise properties;SiGe HBTs;Silicon Germanium;Silicon germanium heterojunction bipolar transistors