Characterization of delta-doped diamond samples with a planar capacitor

[摘要] The method for characterization of delta-doped diamonds is developed based on the measurement of a planar capacitor. Theoretical model for calculation of the product of carrier density and carrier mobility is obtained. Theoretical model verified by the experiment. The experimental value of the product of carrier density and carrier mobility was 6•10141/V•s•m.

[发布机构] St. Petersburg Electrotechnical University, St.-Petersburg; 197376, Russia^1;Institute of Applied Physics, Russian Academy of Science, Nizhny Novgorod; 603950, Russia^2;Cubic Carbon Ceramics, Huntingtown; MD; 20639, United States^3

[关键词] Delta-doped;Experimental values;Planar capacitors;Theoretical modeling