Development and fabrication of a very High-g sensor for very high impact applications
[摘要] In this paper we present the first time our development work of a family of silicon on insulator (SOI)- based piezoresistive MEMS very high G sensors for measurement of accelerations up to 60.000 g. Two sensors have been realized, one for 20.000g and one for 60.000g.
[发布日期] [发布机构] Fraunhofer Institute for Reliability and Microintegration, Germany^1;Technische Universität Berlin, Germany^2;TE Connectivity, Switzerland^3;University of Applied Sciences Berlin, Germany^4
[效力级别] 力学 [学科分类] 力学,机械学
[关键词] High impact;Piezo-resistive;Silicon on insulator (SOI) [时效性]