Junction Parameter Extraction for Electronic Device Characterization

[摘要] A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during anaging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.

[学科分类] 电子、光学、磁材料