Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral

[摘要] We propose a simple model, derived from Pao-Sah theory, valid in all modes from weakto strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field EffectTransistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits ofintegration calculated from Taylor polynomials of inverse functions. The solution is presentedanalytically wherever possible, and the integration is made from simple numerical methods(Simpson, Romberg) or adaptative algorithms and can be implemented in simple C-programor in usual mathematical software. The transconductance and the diffusion current are alsocalculated with the same model.

[学科分类] 电子、光学、磁材料