Modelling of an Esaki Tunnel Diode in a Circuit Simulator

[摘要] A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relativelymodest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results ina physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but alsosingle-valued.

[学科分类] 电子、光学、磁材料