Degradation of VDMOSFET by Heavy Ion Irradiations

[摘要] This article focuses on the effect of the heavy ions irradiations on the electricalcharacteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor FieldEffect Transistor) devices. A summary of the total dose effects and the single event effectsis covered to evaluate the experimental observations. Device degradations due to the hotcarriers junction avalanche are studied by a physical parameters extraction method,leading to an understanding of the degradation processes. Results show that a protectiveresistor load can reduce the degradation effect in the device.

[学科分类] 电子、光学、磁材料