Modeling of Surface Potential and Threshold Voltage of LDDnMOSFET's with Localized Defects

[摘要] We propose a model of the surface potential and the threshold voltage for submicronlightly-doped drain LDDnMOSFET’s in relation with the localized defects at theinterface Si–SiO2in the overlapn‾ LDD region. Calculating the surface potential in theintrinsic and the LDD regions by solving the 2-D Poisson's equation, the minimumsurface potential and the threshold voltage model are derived. Simulation results showthat the extension of the degraded zone induce a decrease of the surface potential and amodification on its profile, this leads to an increase of the threshold voltage. Thethreshold voltage variation can be used to characterize the ageing effect. The DIBL(Drain induced barrier lowering) and the substrate bias effects are also included in thismodel.

[学科分类] 电子、光学、磁材料