Relaxable Damage in Hot-Carrier Stressing ofn-MOS Transistors

[摘要] A method for device characterization is experimented to qualify the relaxable damage inhot-carrier stressing ofn-MOS transistors. The degradation of physical parameters ofthe body-drain junction of power HEXFETs is presented for applied stress conditionVg=Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverserecombination current are shown to be related to relaxation time, and are significantatVg=–Vd. These effects are discussed and explained by the evolution of theinterface states.

[学科分类] 电子、光学、磁材料