A New Method for the Extractionof Diode Parameters Usinga Single Exponential Model

[摘要] A new method for extracting junction parameters of the single diode model is presented.A least squares method approach considers the deviation ∆V=f(I) between theexperimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic.A specific case- the ∆Vgraph reducing to a straight line–is identified and theknowledge of the slope and of the intercept with the ordinate axis leads to the determinationof the junction parameters. The method is applied to the characterization ofthe emitter-base junction of transistors and the results are discussed.

[学科分类] 电子、光学、磁材料