Modeling of Interface Defect Distribution for ann-MOSFETs Under Hot-Carrier Stressing

[摘要] We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time forn-MOSFET transistor. This interface defect density is modeled by a spatial and temporal gaussian distribution centered close to theextremity of the channel near the drain. The gaussian Parameters (standard deviationand maximum) vary according to the stress. The stress generated defects leads to thedegradation of the threshold voltage. The analysis of the threshold voltage evolutionwith stress time allows us to handle informations on the device performances degradation.The mathematic expression is simple so that the present model is suitable forcircuit simulator.

[学科分类] 电子、光学、磁材料