Effect of V2O5Dopant on the Electrical Conductivity of RuO2Thick Film Resistors

[摘要] Thick film glaze resistors have been prepared using V2O5doped RuO2conducting phase. Different amounts of V2O5were incorporated into RuO2lattice by solid state reaction. Sheet resistivity decreased from 235 to 10 kΩ/Sq, with the increase in the dopant concentration from 2 to 6% wt. The conductivity, ‘σ’, was found to fitin the equation σ= KS(l-S), where S is the probability that a given cationic site will contain an extra chargecarrier and K = 10-3mho-sq.

[学科分类] 电子、光学、磁材料