Optical and Structural Properties of Silicon Nanocrystals Embedded in SiOxMatrix Obtained by HWCVD

[摘要] The interest in developing optoelectronic devices integrated in the same silicon chip has motivated the study of Silicon nanocrystals (Si-ncs) embedded in SiOx(nonstoichiometric silicon oxides) films. In this work, Si-ncs in SiOxfilms were obtained by Hot Wire Chemical Vapor Deposition (HWCVD) at 800, 900, and 1000°C. The vibration modes of SiOxfilms were determined by FTIR measurements. Additionally, FTIR and EDAX were related to get the proper composition of the films. Micro-Raman studies in the microstructure of SiOxfilms reveal a transition from amorphous-to-nanocrystalline phase when the growth temperature increases; thus, Si-ncs are detected. Photoluminescence (PL) measurement shows a broad emission from 400 to 1100 nm. This emission was related with both Si-ncs and interfacial defects present in SiOxfilms. The existence of Si-ncs between 3 and 6 nm was confirmed by HRTEM.

[学科分类] 材料工程