The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure

[摘要] The transient thermoelectric effects (TTEs) methodis used to measure the ambipolar space charge built up in a low-pressure hot wire chemical vapor deposition (HWCVD) technique a-Si:H layer deposited on a glass substrate. The stage 2 TTE-transients yield the trap state density difference with and without bending pressure up to 9 bars. The a-Si:H sample shows a reduction of the negative storage peaks at 0.045 eV and 0.026 eV with increasing pressure, while the positive (hole trap) peak and the zero crossing practically do not change with the pressure. At the maximum bending pressure, the negative peaks are almost zero and shifted into the band gap or toward the conduction band. Our result shows that it is necessary to produce and mount hydrogenated thin film solar cell stress-free.

[学科分类] 材料工程