Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally EvaporatedAs2Se3Thin Films

[摘要] The present paper reports the effect of Ge addition on the optical band gap and refractive index ofAs2Se3thin films. Thin films ofAs2Se3and(As2Se3)90Ge10were prepared by thermal evaporation technique at base pressure10−4 Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge toAs2Se3. The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.

[学科分类] 材料工程