The Electrical Characteristics of Aluminium Doped Zinc Oxide Thin Film for Humidity Sensor Applications

[摘要] The electrical characteristics of aluminum (Al) doped zinc oxide (ZnO) thin film for high sensitivity humidity sensors are presented. The effects of Al doping concentration at0~0.6at % on the Al doped ZnO thin film properties were investigated using current-voltage measurement. The optical and structural properties were characterized using photoluminescence (PL), scanning emission microscope (SEM), and X-ray diffraction (XRD). Parameter 0.6 at % Aluminum doped show high sensitivity and suitable for humidity sensor. PL show an emissions band with two peaks centered at about 380 nm (ultra-violet (UV)) and 600 nm (green) in a room temperature. The length of the nanorods increases as the doping concentration increases. XRD results show the intensity of the (002) peak decreased with the increasing of doping concentration.

[学科分类] 材料工程