Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15Film

[摘要] The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.

[学科分类] 材料工程