Deposition-Parameter-Determined Resistive Switching Characteristics in TiOx/Pb(Zr0.52Ti0.48)O3Bilayers

[摘要] Pb(Zr0.52Ti0.48)O3(PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3substrates buffered with La0.7Sr0.3MnO3(LSMO) electrodes. AmorphousTiOxthin films were deposited on top of PZT at various temperatures and oxygen chamber pressures. Bipolar resistive switching characteristics of Pt/TiOx/PZT/LSMO heterostructures are found to vary withTiOxdeposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior. The observations are discussed in terms of the concentration and migration of oxygen vacancies in theTiOxlayer.

[学科分类] 材料工程