Nonstoichiometry inTiO2−yStudied by Ion Beam Methods and Photoelectron Spectroscopy

[摘要] This paper treats a problem of nonstoichiometry inTiO2−ythin films deposited by reactive sputtering at controlled sputtering rates. Ion beam techniques, Rutherford backscattering (RBS), and nuclear reaction analysis (NRA) along with X-ray photoelectron spectroscopy have been applied to determine a deviation from stoichiometryyin the bulk and at the surface ofTiO2−ylayers. The critical review of these experimental methods is given. Defect structure responsible for the electrical resistivity of rutileTiO2is discussed.

[学科分类] 材料工程