An Analytical, Temperature-dependent Modelfor Majority- and Minority-carrier Mobilityin Silicon Devices

[摘要] A new analytical model for carrier mobility in silicon is presented, which is stronglyoriented to CAD and suitable for implementation in device simulators. The effects ofthe electric field, temperature, and doping concentration are accounted for. In particular,the model unifies the descriptions of majority- and minority-carrier mobility andincludes the full temperature dependence. The effects of a high longitudinal field areincluded in the conventional velocity-saturation form; the doping dependence is alsoincorporated in the latter. The model has been worked out starting from a preliminaryinvestigation using a Boltzmann solver, and has been validated by a number of comparisonswith published experiments on silicon.

[学科分类] 电子、光学、磁材料