3D Simulations of Ultra-small MOSFETswith Real-space Treatment of the Electron – Electronand Electron-ion Interactions

[摘要] We present a 3D Ensemble Monte Carlo particle-based simulator with a novel realspacetreatment of the short-range electron – electron and electron-ion interactions. Byusing a corrected Coulomb force in conjunction with a proper cutoff range, the shortrangeportion of the force is properly accounted for, and the ‘double counting’ of thelong-range interaction is eliminated. The proposed method naturally incorporates themulti-ion contributions, local distortions in the scattering potential due to the movementof the free charges, and carrier-density fluctuations. The doping dependence of thelow-field mobility obtained from 3D resistor simulations closely follows experimentalresults, thus supporting the appropriateness of the proposed scheme. Simulations ofultra-small MOSFETs demonstrate that the short-range electron – electron and electronioninteractions are responsible for the fast thermalization of the carriers at the drainend of the device, which occurs over distances that are on the order of few nanometers.The omission of the short-range portions of these two interaction terms leads to significantoverestimation of the distance over which carriers thermalize.

[学科分类] 电子、光学、磁材料