Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

[摘要] A fully integrated CMOS tunable image-rejection low-noiseamplifier (IRLNA) has been designed using Silterra'sindustry standard 0.18 μmRF CMOS process. The notch filter is designed using anactive inductor. Measurement results show that the notch filterdesigned using active inductor contributes additional1.19 dB to the noise figure of the low-noise amplifier(LNA). A better result is possible if the active inductor isoptimized. Since active inductors require less die area, the diearea occupied by the IRLNA is not significantly different from aconventional LNA, which was designed for comparison. The proposedIRLNA exhibits S21 of 11.8 dB, S11 of−17.8 dB,S22 of−10.7 dB,and input 1 dB compression point of−12 dBm at3 GHz

[学科分类] 电子、光学、磁材料