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Formation ofMgO:LiNbO3Domain-Inverted Gratings by Voltage Application under UV Light Irradiation at Room Temperature
[摘要] MgO:LiNbO3is an attractive nonlinear-optic crystal for quasiphasematched (QPM) nonlinear-optic devices. This paper reports a new formation method of domain-inverted gratings for QPM inMgO:LiNbO3. Domain inversion ofMgO:LiNbO3by voltage application under UV light was characterized, and reduction of the voltage required for inversion was demonstrated. Results of voltage application under periodic UV light suggested that suppression of excess lateral expansion of the domain inverted regions on−Zsurface was crucial for domain-inverted grating formation. Voltage application to a crystal with a photoconductive cladding layer under periodic UV light was proposed. The cladding layer suppressed the expansion, and the domain-inverted gratings with period of 18 μm and area of25×5 mm2were obtained. The formation method does not require the photolithography process and allows the formation by voltage application at room temperature, and therefore, is quite simple and productive.
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[效力级别]  [学科分类] 电子、光学、磁材料
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