Theoretical Study of a Thermophysical Property of Molten Semiconductors

[摘要] This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed asγ=876-0.32  (T-Tm)andγ=571-0.074  (T-Tm)(mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2for Ge). The calculated surface tension for both elements decreases linearly with temperature.

[学科分类] 工业化学