Measurement of the Tunneling and Hopping Parameters in RuO2Thick Films

[摘要] Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10)have been produced on alumina[(Al2O3)·96(MgO)·04]substrates. The temperature coefficient of resistivity(TCR) of these films has been measured for different particle size and concentration (weightpercentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameterαandhopping parameterβwere determined. These results suggest that hopping is important for the low concentrationfilms. For films with positive TCR only parameterαcould be determined. The parameterαincreased but the parameterβdecreased with temperature for the present films.

[学科分类] 工程和技术（综合）