Enhanced Gain Microstrip Patches Operating on Higher Order Modes

[摘要] Novel topologies of rectangular microstrip patches providing broadside radiated one point fed radiators with enhanced gain are compared. The principle of the gain enhancement is based on an extension of a source area. Dominant in-phase current distribution on the patch is maintained by using higher order mode and geometrical modification of the patch topology. That is achieved by introducing suitable perturbation elements in the shape of slots and notches. Two principal patch topologies operating onTM21andTM03modes are described. A comparison of simulated and measured properties of realized prototypes at 10 GHz band are presented. The results show that gain 12.3 dBi of single patch can be reached.

[学科分类] 电子、光学、磁材料